ARCHIVES
VOL. 6, ISSUE 1 (2022)
Synthesis of zirconium disulphide thin films and its optical and electrical study
Authors
Ankush M Sargar
Abstract
Zirconium Disulphide thin films were obtained onto
the thoroughly cleaned conducting glass substrate (stainless steel and FTO)
using electrodeposition technique at room temperature. The deposition mechanism
and growth of the films were studied by cyclic voltammetry. The X-ray
diffraction analysis shows that the films are polycrystalline with hexagonal
crystal structure. SEM study shows that substrate surface is well covered by
densely packed spherical shaped grains. Stiochiometry of the film was studied
by EDS technique. Optical absorption study shows the presence of direct
transition having band gap energy 1.8 eV. Zirconium Disulphide is n-type
semiconductor having activation energy, 0.0071 eV in low temperature region and
0.212 eV in high temperature region.
Pages:83-86
How to cite this article:
Ankush M Sargar "Synthesis of zirconium disulphide thin films and its optical and electrical study". International Journal of Chemistry Studies, Vol 6, Issue 1, 2022, Pages 83-86
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